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IDD03E60 Fast Switching EmCon Diode Feature * 600 V EmCon technology * Fast recovery * Soft switching * Low reverse recovery charge * Low forward voltage * 175C operating temperature * Easy paralleling Product Summary VRRM IF VF T jmax 600 3 1.5 175 V A V C Type IDD03E60 Package P-TO252-3-1 Ordering Code Q67040-S4377 Marking D03E60 Pin 1 NC PIN 2 C PIN 3 A Maximum Ratings, at Tj = 25 C, unless otherwise specified Parameter Repetitive peak reverse voltage Continous forward current TC=25C TC=90C Symbol VRRM IF Value 600 7.3 4.9 Unit V A Surge non repetitive forward current TC=25C, tp=10 ms, sine halfwave I FSM I FRM Ptot 16 11 W 23 13.1 Maximum repetitive forward current TC=25C, tp limited by Tjmax, D=0.5 Power dissipation TC=25C TC=90C Operating and storage temperature Soldering temperature for 10s (according to JEDEC J-STD-020A) Tj , Tstg TS -55...+175 255 C C Rev.2 Page 1 2003-07-31 IDD03E60 Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case SMD version, device on PCB: @ min. footprint @ 6 cm 2 cooling area 1) Symbol min. RthJC RthJA - Values typ. max. 6.5 75 50 Unit K/W Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Static Characteristics Reverse leakage current V R=600V, Tj=25C V R=600V, Tj=150C Symbol min. IR VF - Values typ. max. Unit A 1.5 1.5 50 250 V 2 - Forward voltage drop IF=3A, Tj=25C IF=3A, Tj=150C 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical without blown air. Rev.2 Page 2 2003-07-31 IDD03E60 Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Dynamic Characteristics Reverse recovery time V R=400V, IF=3A, di F/dt=350A/s, Tj=25C V R=400V, IF=3A, di F/dt=350A/s, Tj=125C V R=400V, IF=3A, di F/dt=350A/s, Tj=150C Symbol min. t rr I rrm Q rr S - Values typ. max. Unit ns 62 98 103 3.8 4.6 4.7 118 195 215 4.1 5.1 5.2 A nC - Peak reverse current V R=400V, IF = 3 A, diF/dt=350A/s, Tj=25C V R=400V, IF =3A, diF /dt=350A/s, T j=125C V R=400V, IF =3A, diF /dt=350A/s, T j=150C Reverse recovery charge V R=400V, IF=3A, di F/dt=350A/s, Tj=25C V R=400V, IF =3A, diF /dt=350A/s, T j=125C V R=400V, IF =3A, diF /dt=350A/s, T j=150C Reverse recovery softness factor V R=400V, IF=3A, di F/dt=350A/s, Tj=25C V R=400V, IF=3A, di F/dt=350A/s, Tj=125C V R=400V, IF=3A, di F/dt=350A/s, Tj=150C Rev.2 Page 3 2003-07-31 IDD03E60 1 Power dissipation Ptot = f (TC) parameter: Tj 175C 24 2 Diode forward current IF = f(TC) parameter: Tj 175C 8 W 20 18 A 6 P tot 16 5 14 12 10 3 8 6 4 1 2 0 25 50 75 100 125 2 4 IF 175 C TC 0 25 50 75 100 125 C TC 175 3 Typ. diode forward current IF = f (VF) 9 4 Typ. diode forward voltage VF = f (Tj) 2 A 7 6 V 6A VF IF -55C 25C 100C 150C 1.8 1.7 1.6 1.5 3A 5 4 1.4 3 2 1 0 0 1.3 1.2 1.1 1 -60 1,5A 0.5 1 1.5 V VF 2.5 -20 20 60 100 160 C Tj Rev.2 Page 4 2003-07-31 IDD03E60 5 Typ. reverse recovery time trr = f (diF/dt) parameter: V R = 400V, T j = 125C 220 6 Typ. reverse recovery charge Qrr =f(diF/dt) parameter: VR = 400V, Tj = 125 C 300 ns 180 160 nC 260 6A trr 140 120 6A 3A 1.5A 240 Q rr 220 200 3A 100 180 80 60 40 20 0 200 300 400 500 600 700 800 160 1.5A 140 120 100 200 800 A/s 1000 A/s 1000 di F/dt 300 400 500 600 700 diF/dt 7 Typ. reverse recovery current Irr = f (diF/dt) parameter: V R = 400V, T j = 125C 8 8 Typ. reverse recovery softness factor S = f(diF /dt) parameter: VR = 400V, Tj = 125C 9 A 7 6.5 6A 3A 1.5A 7 6 6A 3A 1.5A Irr S 5 4 3 2 1 0 200 300 400 500 600 700 800 6 5.5 5 4.5 4 3.5 3 2.5 200 A/s 1000 di F/dt 300 400 500 600 700 800 A/s 1000 diF/dt Rev.2 Page 5 2003-07-31 IDD03E60 9 Max. transient thermal impedance ZthJC = f (tp) parameter : D = t p/T 10 1 IDD03E60 K/W 10 0 ZthJC 10 -1 D = 0.50 0.20 0.10 0.05 0.02 single pulse 0.01 10 -2 10 -3 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp Rev.2 Page 6 2003-07-31 IDD03E60 P-TO252 (D-Pak) dimensions symbol min A B C D E F G H K L M N P R S T U 2.19 0.76 0.90 5.97 9.40 0.46 0.87 0.51 5.00 4.17 0.26 6.40 5.25 (0.65) 0.63 2.28 2.39 0.98 1.21 6.23 10.40 0.58 1.15 1.02 [mm] max 6.73 5.50 (1.15) 0.89 min 0.2520 0.2067 0.0248 inch] max 0.2650 0.2165 0.0350 (0.0256) (0.0453) 0.2520 0.0862 0.0941 0.0299 0.0354 0.2350 0.3701 0.0181 0.0343 0.0201 0.1969 0.1642 0.0102 0.0386 0.0476 0.2453 0.4094 0.0228 0.0453 0.0402 - Rev.2 Page 7 2003-07-31 IDD03E60 Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 Munchen (c) Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev.2 Page 8 2003-07-31 |
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